Purpose of this measurement
- Use an independent method (I–V curve analysis) to cross-check and validate the previously obtained breakdown voltage(37.84V at 20C)
Current status
- Measured SiPM current–voltage (I–V) characteristics at fixed temperature(19C), no illumination.
- Bias voltage scanned from 0–45 V with 0.5 V step

Further plan / Next steps
- Perform ILD analysis on existing I–V data to extract preliminary Vbd
- Repeat I–V measurements at different temperatures to study temperature dependence of Vbd
- Take denser voltage steps around the expected Vbd region to improve Vbd determination accuracy