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Devices based on two-dimensional materials have recently gained a lot of attention. Various two-dimensional electronics and optoelectronic devices, heterojunction devices, etc., have demonstrated rich functions. On the other hand, by precisely controlling the angle of rotation between two single-layer two-dimensional materials, intriguing physical properties such as superconducting and ferroelectric states have been realized. These functions and physical properties are determined by the microscopic electronic structure of the devices, and measuring them is important for understanding their macroscopic properties. This talk will present some of the recent works we have done in this area. I will introduce the in-situ measurements of the band structures and edge states of two-dimensional semiconductor devices by the new contact-mode scanning tunneling spectroscopy method, and the measurement of the twisted two-dimensional systems by the traditional scanning probe method.
Associate Professor at Shanghai Tech University. He received his BS degree from USTC in 2006 and PhD from University of Arizona in 2012. He joined Shanghai Tech since 2014. His research interests include scanning probe microscopy (SPM) and transport of quantum materials, and new techniques combining SPM and transport in devices. He has published as the corresponding author in Physical Review X, Advanced Materials, Review of Scientific Instruments, and so on.