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Seminars

Quant-ph 20180416 The role played by hBN in Graphene/hBN devices

by Dr Wei Yang (ICFO-The Institute of Photonic Sciences)

Asia/Shanghai
Meeting Room 410,TDLI(Tsung-Dao Lee Library)

Meeting Room 410,TDLI(Tsung-Dao Lee Library)

Description
Abstract

The hexagonal boron nitride (hBN) is a well-known substrate for graphene and other 2D heterostructure devices, mostly due to its flat, chemical inert surface and a good dielectric with a large band gap. In fact, hBN is found to be much more interesting and important thanit acts as a substrate, there are many interesting and important transport physics originated from the Graphene/hBN interface. In this report, different aspects of roles played by hBN in Graphene/hBN devices will be discussed, and Wei will show epitaxy of graphene superlattice, fractal Hofstadter Butterfly spectra, Zener-Klein tunneling and remote coupling of electron in graphene lattices to hyperbolic phonons from hBN lattices.

References:
1. Wei Yang, et al., A graphene Zener–Klein transistor cooled by a hyperbolic substrate, Nature Nanotechnology 13, 47–52 (2018).
2. Wei Yang, et al., Hofstadter Butterfly and Many body effects in epitaxial graphene superlattice, Nano letters 16, 2387–2392 (2016).
3. Wei Yang, et al., Epitaxial growth of single-domain graphene on hexagonal boron nitride, Nature Materials 12,792 (2013).

Biography

Wei Yang got his PhD in 2014 from the Institute of Physics CAS. Then he worked as a postdoc in Laboratoire Pierre Aigrain in Paris for 3 years. He is currently working in the Institute of Photonic Sciences in Spain as a postdoctoral scholar. His research focuses on electron transport in low dimensional materials.

Division
Condensed Matter